Diodes Incorporated DMN24H3D6S-7 is a N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source breakdown voltage (BVDSS) range of 101V to 250V, making it suitable for demanding power conversion and management tasks. Packaged in a compact SOT23 (TO-236) surface-mount package, the DMN24H3D6S-7 facilitates dense board layouts. Its robust construction and performance characteristics are well-suited for use in automotive, industrial, and consumer electronics sectors where reliable power handling is critical. The component is supplied on a tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)