DMN2450UFB4Q-7B
MOSFET BVDSS: 8V~24V X2-DFN1006-Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMN2450UFB4Q-7B is an N-Channel Power MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 1A at 25°C (Ta). The device exhibits a maximum On-Resistance (Rds On) of 400mOhm at 600mA and 4.5V Vgs. Key parameters include a Gate Charge (Qg) of 1.3 nC (max) at 10V and an Input Capacitance (Ciss) of 56 pF (max) at 16V Vds. It operates with a gate drive range of 1.8V to 4.5V and has a maximum Gate-Source Voltage (Vgs) of ±12V. The DMN2450UFB4Q-7B is qualified to AEC-Q101 standards, indicating its suitability for automotive applications, and is packaged in a 3-XFDFN (X2-DFN1006-3) format on tape and reel. The maximum power dissipation is 500mW (Ta) with an operating temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 600mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | X2-DFN1006-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 56 pF @ 16 V |
| Qualification | AEC-Q101 |
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