DMN2400UFDQ-7
MOSFET N-CH 20V 900MA 3DFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMN2400UFDQ-7 is a 20V N-Channel MOSFET designed for surface mount applications. This component features a low Rds(on) of 600mOhm at 200mA and 4.5V Vgs, with a continuous drain current capability of 900mA at 25°C. The device utilizes U-DFN1212-3 (Type C) packaging, offering a compact footprint suitable for space-constrained designs. Key electrical characteristics include a gate charge of 0.5 nC at 4.5V and an input capacitance of 37 pF at 16V. The operating temperature range is -55°C to 150°C. This MOSFET is commonly found in communication and consumer electronics, leveraging its efficient switching capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerUDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | U-DFN1212-3 (Type C) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 37 pF @ 16 V |
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