DMN2400UFDQ-13
MOSFET N-CH 20V 900MA 3DFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel Power MOSFET, DMN2400UFDQ-13, is engineered for efficient power management. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 900mA at 25°C. With a low on-resistance (Rds On) of 600mOhm at 200mA and 4.5V Vgs, it minimizes conduction losses. The MOSFET operates with a gate-source voltage range of ±12V, and its threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. The U-DFN1212-3 (Type C) package offers a compact footprint for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 0.5 nC at 4.5V and an input capacitance (Ciss) of 37 pF at 16V. Power dissipation is rated at 400mW (Ta). This component is suitable for applications in consumer electronics, industrial automation, and portable devices where space and efficiency are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerUDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Ta) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | U-DFN1212-3 (Type C) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 37 pF @ 16 V |
Request a Quote
Clients Also Buy
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
DMP21D0UFB-7
MOSFET P-CH 20V 770MA 3DFN
DMTH43M8LFGQ-13
MOSFET N-CH 40V PWRDI3333
