DMN2230U-7
MOSFET N-CH 20V 2A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN2230U-7, an N-Channel MOSFET designed for efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2A at 25°C. The Rds On is specified at a maximum of 110mOhm when driven at 2.5A with a 4.5V Vgs. Drive voltage can range from 1.8V to 4.5V. With a maximum power dissipation of 600mW (Ta), this MOSFET is suitable for applications demanding compact power management. Key parameters include an input capacitance (Ciss) of 188 pF at 10V and a gate threshold voltage (Vgs(th)) of 1V at 250µA. The operating temperature range is -55°C to 150°C. The DMN2230U-7 is supplied in a SOT-23-3 surface mount package and is available on tape and reel. This device is commonly utilized in consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 188 pF @ 10 V |
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