DMN2170U-7
MOSFET N-CH 20V 2.3A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated MOSFET N-Channel, part number DMN2170U-7, offers a 20V drain-source breakdown voltage and a continuous drain current of 2.3A at 25°C. This surface mount device, packaged in a SOT-23-3 (TO-236-3, SC-59), features a maximum power dissipation of 600mW. Key electrical characteristics include a maximum on-resistance of 70mOhm at 3A and 4.5V Vgs, and an input capacitance of 217 pF at 10V Vds. The device operates within a temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and general purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 217 pF @ 10 V |
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