DMN2120UFCL-7
MOSFET N-CH 20V 1.8A 6UDFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMN2120UFCL-7 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 1.8A at 25°C, with a maximum power dissipation of 450mW. Its low on-resistance, specified at 100mOhm maximum at 3.6A and 4.5V Vgs, ensures minimal conduction losses. The device utilizes a U-DFN1616-6 (Type K) package for compact, surface-mount integration. Key electrical characteristics include a gate charge (Qg) of 2.8 nC maximum at 10V and an input capacitance (Ciss) of 130 pF maximum at 10V. The DMN2120UFCL-7 is suitable for use in portable electronics, power management, and battery-operated devices. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 450mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | U-DFN1616-6 (Type K) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 10 V |
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