DMN2114SN-7
MOSFET N-CH 20V 1.2A SC59-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated MOSFET N-CH 20V 1.2A SC59-3, DMN2114SN-7, is a surface-mount N-channel power MOSFET designed for general-purpose switching applications. This component features a drain-source breakdown voltage (Vdss) of 20V and a continuous drain current (Id) capability of 1.2A at 25°C ambient. The Rds(on) is specified at a maximum of 100mOhm when driven at 4.5V Vgs and carrying 500mA Id. Key parameters include a Vgs(th) of 1.4V at 1mA and an input capacitance (Ciss) of 180pF at 10V Vds. With a maximum power dissipation of 500mW at 25°C ambient, this device is suitable for use in consumer electronics and industrial automation. It is supplied in a SC-59-3 package and is available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | SC-59-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
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