DMN2112SN-7
MOSFET N-CH 20V 1.2A SC59-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel MOSFET, part number DMN2112SN-7, offers a 20V drain-source breakdown voltage and 1.2A continuous drain current at 25°C (Ta). This device features a low on-resistance of 100mOhm maximum at 500mA, 4.5V Vgs. The DMN2112SN-7 utilizes MOSFET technology and is packaged in a compact SC-59-3 (TO-236-3, SC-59, SOT-23-3) surface mount configuration, supplied on tape and reel. Key electrical parameters include a maximum input capacitance of 220pF at 10V Vds and a gate-source threshold voltage of 1.2V at 1mA. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Supplier Device Package | SC-59-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 10 V |
Request a Quote
Clients Also Buy
DMN2009LSS-13
MOSFET N-CH 20V 12A 8SOP
DMT6030LFDF-7
MOSFET N-CH 60V 6.8A 6UDFN
DMN62D0UWQ-7
MOSFET N-CH 60V 340MA SOT323
