DMN2104L-7
MOSFET N-CH 20V 4.3A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN2104L-7, an N-Channel MOSFET designed for efficient switching applications. This component features a 20V Drain-Source Voltage (Vdss) rating and supports a continuous drain current (Id) of 4.3A at 25°C, with a maximum power dissipation of 1.4W. The Rds(On) is specified at a maximum of 53mOhm at 4.2A and 4.5V Vgs.
The DMN2104L-7 utilizes advanced MOSFET technology and is packaged in a compact SOT-23-3 surface mount configuration, ideal for space-constrained designs. It operates across a temperature range of -55°C to 150°C and has an input capacitance (Ciss) of 325pF at 10V. This device is commonly found in consumer electronics and industrial control systems. Drive voltages for optimal on-resistance are 2.5V and 4.5V, with a maximum gate-source voltage (Vgs) of ±12V. The threshold voltage (Vgs(th)) is 1.4V at 250µA. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 4.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 10 V |
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