DMN2075UDW-7
MOSFET N-CH 20V 2.8A SOT363Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN2075UDW-7 is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source voltage and a continuous drain current capability of 2.8A at 25°C with a maximum power dissipation of 500mW (Ta). The on-resistance (Rds On) is specified at 48mOhm maximum at 3A, 4.5V, and it operates with a gate-source voltage range of ±8V, with a threshold voltage of 1V at 250µA. Key parameters include a gate charge of 7nC at 4.5V and input capacitance of 594.3pF at 10V. The DMN2075UDW-7 is housed in a compact SOT-363 (6-TSSOP, SC-88) surface-mount package, supplied on tape and reel. This MOSFET is suitable for use in portable electronics, power management, and consumer devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-363 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 594.3 pF @ 10 V |
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