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DMN2075UDW-7

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DMN2075UDW-7

MOSFET N-CH 20V 2.8A SOT363

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMN2075UDW-7 is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source voltage and a continuous drain current capability of 2.8A at 25°C with a maximum power dissipation of 500mW (Ta). The on-resistance (Rds On) is specified at 48mOhm maximum at 3A, 4.5V, and it operates with a gate-source voltage range of ±8V, with a threshold voltage of 1V at 250µA. Key parameters include a gate charge of 7nC at 4.5V and input capacitance of 594.3pF at 10V. The DMN2075UDW-7 is housed in a compact SOT-363 (6-TSSOP, SC-88) surface-mount package, supplied on tape and reel. This MOSFET is suitable for use in portable electronics, power management, and consumer devices.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Rds On (Max) @ Id, Vgs48mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-363
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds594.3 pF @ 10 V

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