DMN2040UVT-13
MOSFET N-CH 20V 6.7A TSOT26 T&RManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel Power MOSFET, part number DMN2040UVT-13, offers a 20V drain-source voltage and a continuous drain current of 6.7A at 25°C. This device features a low Rds(on) of 24mOhm at 6.2A and 4.5V Vgs. The TSOT-26 package enables efficient thermal performance with a maximum power dissipation of 1.2W. Key parameters include a gate charge of 7.5 nC at 4.5V Vgs and an input capacitance of 667 pF at 10V Vds. The MOSFET operates across a wide temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 6.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 667 pF @ 10 V |
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