DMN2027LK3-13
MOSFET N-CH 20V 11.6A TO252-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMN2027LK3-13, offers 20V drain-source breakdown voltage and 11.6A continuous drain current at 25°C ambient. This surface-mount component features a low Rds(on) of 21mOhm at 20A and 10V Vgs, with a gate charge of 9.1 nC at 4.5V. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.14W (Ta). The device is packaged in a TO-252-3 (DPAK) surface-mount package and is supplied on tape and reel. Applications include power management and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.14W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 857 pF @ 10 V |
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