DMN2015UFDF-13
MOSFET N-CH 20V 15.2A 6UDFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN2015UFDF-13, an N-Channel MOSFET designed for demanding applications requiring high current density in a compact footprint. This device features a 20V Drain-Source Voltage (Vdss) and can handle a continuous drain current of 15.2A at 25°C. The ultra-low profile U-DFN2020-6 package, with its exposed pad, facilitates efficient thermal management and enables a maximum power dissipation of 1.8W. Achieving a low on-resistance of 9mOhm at 8.5A and 4.5V Vgs, the DMN2015UFDF-13 offers excellent conductivity. Key parameters include a maximum Gate Charge (Qg) of 42.3 nC at 10V, and an input capacitance (Ciss) of 1439 pF at 10V. Drive voltages as low as 1.5V are supported for Rds On optimization. This component is suitable for power management solutions in sectors such as consumer electronics and industrial automation. It operates reliably across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 8.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | U-DFN2020-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 42.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1439 pF @ 10 V |
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