DMN2009UFDF-7
MOSFET BVDSS: 8V~24V U-DFN2020-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMN2009UFDF-7 is an N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage (Vds) and supports a continuous drain current of 12.8A at 25°C ambient temperature. Its low on-resistance (Rds On) of 9mOhm at 4.5Vgs and 8.5A Id, coupled with a gate charge (Qg) of 27.9nC maximum at 10Vgs, ensures efficient switching performance. The device boasts a maximum power dissipation of 1.3W in an ambient environment. Housed in a compact 6-UDFN Exposed Pad (U-DFN2020-6 Type F) package suitable for surface mounting, it operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 8.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1083 pF @ 10 V |
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