DMN2009UFDF-13
MOSFET BVDSS: 8V~24V U-DFN2020-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMN2009UFDF-13. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 12.8A at 25°C ambient. The on-resistance (Rds On) is a maximum of 9mOhm at 8.5A and 4.5V Vgs. Designed for efficient power management, it offers a low gate charge of 27.9 nC maximum at 10V Vgs and an input capacitance of 1083 pF maximum at 10V Vds. The DMN2009UFDF-13 is housed in a compact U-DFN2020-6 (Type F) surface-mount package, enabling high-density designs. Its power dissipation is rated at 1.3W ambient. This MOSFET is suitable for applications in consumer electronics and industrial automation where efficient power switching is critical. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 8.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1083 pF @ 10 V |
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