DMN10H220LVT-13
MOSFET N-CH 100V 1.87A TSOT26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN10H220LVT-13 is a 100V N-Channel MOSFET designed for surface mount applications. This component, packaged in a compact TSOT-26 (SOT-23-6 Thin) case, offers a continuous drain current capability of 1.87A at 25°C with a maximum power dissipation of 1.67W under the same conditions. Key electrical characteristics include a maximum Rds(On) of 220mOhm at 1.6A and 10V gate drive, with a threshold voltage (Vgs(th)) of 2.5V at 250µA. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 8.3 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 401 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power management and general switching applications within automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.87A (Ta) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.67W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 401 pF @ 25 V |
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