DMN10H170SVT-13
MOSFET N-CH 100V 2.6A TSOT26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated DMN10H170SVT-13 is an N-Channel MOSFET designed for efficient power switching applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2.6A at 25°C ambient temperature. The on-resistance (Rds On) is specified at a maximum of 160mOhm when driven at 10V Vgs and carrying 5A. With a gate charge (Qg) of 9.7 nC at 10V Vgs and input capacitance (Ciss) of 1167 pF at 25V Vds, it offers a favorable balance for demanding designs. The DMN10H170SVT-13 is housed in a compact TSOT-26 package, suitable for surface mounting. Its maximum power dissipation is rated at 1.2W (Ta), and it operates across a temperature range of -55°C to 150°C. This component finds utility in various industries including automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1167 pF @ 25 V |
Request a Quote
Clients Also Buy
DMN2009LSS-13
MOSFET N-CH 20V 12A 8SOP
DMT6030LFDF-7
MOSFET N-CH 60V 6.8A 6UDFN
DMN62D0UWQ-7
MOSFET N-CH 60V 340MA SOT323
