DMN10H170SFDE-13
MOSFET N-CH 100V 2.9A 6UDFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN10H170SFDE-13, an N-Channel MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain current capability of 2.9A at 25°C. The device features a low on-resistance of 160mOhm maximum at 5A and 10V Vgs, with a drive voltage range from 4.5V to 10V. Key parameters include a Gate Charge (Qg) of 9.7 nC (max) at 10V and Input Capacitance (Ciss) of 1167 pF (max) at 25V. The DMN10H170SFDE-13 is housed in a compact 6-UDFN (Type E) package, suitable for surface mounting, and supports an operating temperature range of -55°C to 150°C (TJ). Maximum power dissipation is rated at 660mW. This MOSFET is utilized in various industries including consumer electronics and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerUDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type E) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1167 pF @ 25 V |
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