DMN10H099SFG-7
MOSFET N-CH 100V 4.2A PWRDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 4.2A (Ta) 980mW (Ta) Surface Mount POWERDI3333-8
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 980mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 50 V |
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