DMN1032UCB4-7
MOSFET N-CH 12V 4.8A U-WLB1010-4Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN1032UCB4-7, an N-Channel MOSFET designed for high-density applications. This component features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 4.8A at 25°C. The device exhibits a low on-resistance (Rds On) of 26mOhm at 1A and 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 4.5 nC and input capacitance (Ciss) of 450 pF, both specified at typical operating conditions. The DMN1032UCB4-7 utilizes a U-WLB1010-4 wafer-level chip scale package, enabling compact designs. Its surface mount configuration and operating temperature range of -55°C to 150°C make it suitable for portable electronics and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | U-WLB1010-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 6 V |
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