DMN1023UCB4-7
MOSFET N CH 5.1A U-WLB1010-4Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated DMN1023UCB4-7 is a low Rds(on) N-Channel MOSFET designed for efficient power switching. This component features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 5.1A at 25°C. With a maximum Rds(on) of 23mOhm at 1A and 4.5V Vgs, it offers minimal conduction losses. The MOSFET is supplied in a compact U-WLB1010-4 (Type C) package, suitable for space-constrained applications. Key electrical parameters include a gate charge (Qg) of 2.3 nC max at 4.5V Vgs and an input capacitance (Ciss) of 288 pF max at 6V Vds. It operates across a temperature range of -55°C to 150°C. The Diodes Incorporated DMN1023UCB4-7 is commonly utilized in portable electronics, battery management, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | U-WLB1010-4 (Type C) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 288 pF @ 6 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
