DMN1016UCB6-7
MOSFET N-CH 12V 5.5A U-WLB1510-6Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMN1016UCB6-7, an N-Channel MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 12 V and a continuous drain current (Id) of 5.5 A at 25°C. With a maximum on-resistance (Rds On) of 20 mOhm at 1.5 A and 4.5 V gate-source voltage, it delivers efficient switching performance. The device is housed in a compact 6-UFBGA, WLBGA package, suitable for surface mounting. Key parameters include a maximum power dissipation of 920 mW (Ta) and a gate charge (Qg) of 4.2 nC at 4.5 V. The DMN1016UCB6-7 is utilized in industries such as consumer electronics and portable devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | U-WLB1510-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 423 pF @ 6 V |
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