DMN1014UFDF-7
MOSFET N-CH 12V 8A 6UDFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Diodes Incorporated DMN1014UFDF-7 is an N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 8A at 25°C. The device exhibits a low on-resistance (Rds On) of 16mOhm maximum at 2A and 4.5V Vgs, with a gate threshold voltage (Vgs(th)) of 1V maximum at 250µA. Key parameters include a maximum gate charge (Qg) of 6.4 nC at 4.5V Vgs and input capacitance (Ciss) of 515 pF maximum at 6V Vds. The DMN1014UFDF-7 is packaged in a compact 6-UDFN Exposed Pad (U-DFN2020-6 Type F) for surface mounting, with a power dissipation capability of 700mW. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for use in consumer electronics, industrial control, and battery management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 515 pF @ 6 V |
Request a Quote
Clients Also Buy
DMN31D6UT-7
MOSFET N-CH 30V 350MA SOT523
DMN601WKQ-13
MOSFET N-CH 60V SOT323
DMN95H2D2HCTI
MOSFET N-CH 950V 6A ITO220AB
