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DMN1014UFDF-13

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DMN1014UFDF-13

MOSFET N-CH 12V 8A 6UDFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated DMN1014UFDF-13 is an N-Channel MOSFET designed for efficient power switching. This component features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C. With a low on-resistance of 16mOhm at 2A and 4.5V (Vgs), it offers minimal conduction losses. The device operates with drive voltages between 2.5V and 4.5V, and a maximum gate-source voltage (Vgs) of ±8V. Key parameters include a gate charge (Qg) of 6.4 nC at 4.5V and an input capacitance (Ciss) of 515 pF at 6V. The DMN1014UFDF-13 has a maximum power dissipation of 700mW and is housed in a compact U-DFN2020-6 (Type F) package, suitable for surface mounting. It is manufactured using advanced MOSFET technology and is supplied in tape and reel packaging. This component finds application in various electronic systems requiring high-efficiency power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Rds On (Max) @ Id, Vgs16mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageU-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds515 pF @ 6 V

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