DMN100-7-F
MOSFET N-CH 30V 1.1A SC59-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMN100-7-F is an N-Channel MOSFET designed for surface mount applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 1.1A at 25°C. The Rds On is specified at a maximum of 240mOhm at 1A and 10V gate-source voltage. Gate charge (Qg) is a maximum of 5.5 nC at 10V, with input capacitance (Ciss) at 150 pF maximum at 10V. This device operates within a temperature range of -55°C to 150°C. The package type is SC-59-3 (TO-236-3, SC-59, SOT-23-3) and it is supplied on tape and reel. Power dissipation is rated at 500mW (Ta). Applications for this MOSFET include power management, battery charging, and general-purpose switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | SC-59-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 10 V |
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