DMJ7N70SK3-13
MOSFET N-CH 700V 3.9A TO252Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMJ7N70SK3-13 is a N-Channel Power MOSFET featuring a 700V drain-source breakdown voltage. This surface mount device, housed in a TO-252-3 (DPAK) package, offers a continuous drain current capability of 3.9A (Tc) and a maximum power dissipation of 28W (Tc). The DMJ7N70SK3-13 exhibits a low on-resistance of 1.25 Ohms at 2.5A, 10V, with a gate charge of 13.9 nC and input capacitance of 351 pF at specified voltages. Its operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 351 pF @ 50 V |
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