DMJ70H601SK3-13
MOSFET N-CHANNEL 700V 8A TO252Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated's DMJ70H601SK3-13 is a 700V N-Channel power MOSFET designed for high-voltage applications. This surface-mount component, housed in a TO-252 DPAK package, offers a continuous drain current capability of 8A at 25°C with a maximum power dissipation of 125W (Tc). Key electrical characteristics include a low Rds(on) of 600mOhm at 2.1A and 10V, a gate charge of 20.9 nC at 10V, and input capacitance of 686 pF at 50V. The device operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 686 pF @ 50 V |
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