DMJ70H600SH3
MOSFET N-CH 700V 11A TO251Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMJ70H600SH3 is a 700V N-Channel MOSFET designed for demanding applications. This device features a continuous drain current (Id) of 11A at 25°C (Tc) and a maximum power dissipation of 113W (Tc). Its low on-resistance (Rds On) of 600mOhm is specified at 2.4A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 18.2 nC at 10V and input capacitance (Ciss) of 643 pF at 25V. The MOSFET operates over a temperature range of -55°C to 150°C and is housed in a TO-251-3 Short Leads (IPAK) package, suitable for through-hole mounting. This component is AEC-Q101 qualified, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 113W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 643 pF @ 25 V |
| Qualification | AEC-Q101 |
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