DMJ70H600HK3-13
MOSFET BVDSS: 651V~800V TO252 T&Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMJ70H600HK3-13 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 700V and a continuous drain current (Id) of 7.6A at 25°C (Tc), with a maximum power dissipation of 90W (Tc). The ON-resistance (Rds On) is specified at a maximum of 600mOhm at 2.4A and 10V gate drive voltage. Key parameters include a gate charge (Qg) of 17.4 nC at 10V and input capacitance (Ciss) of 570 pF at 25V. The MOSFET utilizes Metal Oxide technology and supports a maximum gate-source voltage (Vgs) of ±30V. This component is housed in a TO-252-3, DPAK surface mount package and is qualified to AEC-Q101 standards, making it suitable for automotive applications. It operates across a wide temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
| Qualification | AEC-Q101 |
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