DMJ70H600HCT
MOSFET BVDSS: 651V~800V TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMJ70H600HCT is a 700V N-Channel MOSFET. This component offers a continuous drain current of 8.5A at 25°C (Tc) and features a maximum on-resistance of 600mOhm at 2.4A and 10V Vgs. Key parameters include a gate charge of 17.4 nC @ 10V and input capacitance of 570 pF @ 25V. The DMJ70H600HCT is housed in a TO-220AB (Type TH) package, suitable for through-hole mounting. It operates within an extended temperature range of -55°C to 150°C (TJ). This MOSFET is qualified to AEC-Q101 standards, making it suitable for automotive applications. Power dissipation is rated at 2.3W (Ta) and 104W (Tc).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB (Type TH) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
| Qualification | AEC-Q101 |
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