DMJ70H1D5SV3
MOSFET N-CHANNEL 700V 5A TO251Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMJ70H1D5SV3 is a 700V N-Channel MOSFET designed for high-voltage applications. This component offers a continuous drain current of 5A at 25°C (Tc) and a maximum power dissipation of 78W (Tc). The Rds(On) is specified at a maximum of 1.5 Ohm at 1A and 10V gate drive. Key parameters include a gate charge of 9.8 nC (max) at 10V and input capacitance of 316 pF (max) at 50V. The device is housed in a TO-251-3 Stub Leads, IPAK package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in various industries including power supply design and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (Type TH3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 316 pF @ 50 V |
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