DMJ70H1D4SV3
MOSFET N-CHANNEL 700V 5A TO251Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMJ70H1D4SV3 is a 700V N-Channel Power MOSFET designed for high-voltage applications. This component offers a continuous drain current of 5A at 25°C and a maximum power dissipation of 78W (Tc). Key parameters include a low on-resistance of 1.5 Ohm maximum at 1A, 10V, and a gate charge of 7.5 nC at 10V. The input capacitance (Ciss) is specified at 342 pF maximum at 50V. It features a Vgs(th) of 4V at 250µA and supports a Vgs range of ±30V. The DMJ70H1D4SV3 is housed in a TO-251 (Type TH3) package with through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (Type TH3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 50 V |
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