DMJ70H1D3SK3-13
MOSFET BVDSS: 651V~800V TO252 T&Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMJ70H1D3SK3-13 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 700V and a continuous drain current (Id) of 4.7A at 25°C (Tc), with a maximum power dissipation of 57W (Tc). The DMJ70H1D3SK3-13 offers a low on-resistance (Rds On) of 1.4 Ohms maximum at 1A, 10V, and a gate charge (Qg) of 9.8 nC maximum at 10V. Its input capacitance (Ciss) is rated at 264 pF maximum at 100V. Manufactured using advanced MOSFET technology, this device is suitable for surface mounting within a TO-252-3, DPAK package. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in power supply, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 264 pF @ 100 V |
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