DMJ70H1D3SH3
MOSFET N-CH 700V 4.6A TO251Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMJ70H1D3SH3 is a 700V N-Channel Power MOSFET designed for high-voltage applications. This component features a continuous drain current capability of 4.6A at 25°C (Tc) and a maximum power dissipation of 41W (Tc). The device offers a low on-resistance of 1.3 Ohms maximum at 2.5A and 10V Vgs. Key parameters include a drain-source voltage (Vdss) of 700V, a gate-source voltage (Vgs) range of ±30V, and a threshold voltage (Vgs(th)) of 4V at 250µA. Input capacitance (Ciss) is specified at 351 pF maximum at 50V, with a gate charge (Qg) of 13.9 nC maximum at 10V. Packaged in a TO-251 (Type TH3) through-hole configuration, this MOSFET is suitable for use in power supply, lighting, and industrial control applications. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 (Type TH3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 351 pF @ 50 V |
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