DMJ65H650SCTI
MOSFET N-CH 650V 10A ITO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMJ65H650SCTI is a 650V N-Channel Power MOSFET designed for high-performance applications. This device features a continuous drain current of 10A at 25°C (Tc) and a maximum power dissipation of 31W (Tc). The drain-to-source on-resistance (Rds On) is specified at 600mOhm maximum at 2.4A and 10V gate-source voltage. Key characteristics include a gate charge of 12.9 nC (max) at 10V and an input capacitance (Ciss) of 639 pF (max) at 100V. The DMJ65H650SCTI utilizes a standard TO-220AB (Type TH) isolated tab package suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for power supply, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ITO-220AB (Type TH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 639 pF @ 100 V |
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