DMJ65H430SCTI
MOSFET BVDSS: 501V~650V ITO-220AManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMJ65H430SCTI is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 14 A at 25°C. The DMJ65H430SCTI offers a low on-resistance (Rds On) of 430 mOhms at 5 A and 10 V gate-source voltage. Its through-hole mounting and isolated tab TO-220AB-N (Type HE) package facilitate efficient thermal management with a maximum power dissipation of 50 W (Tc). Key parameters include a gate charge (Qg) of 24.5 nC at 10 V and input capacitance (Ciss) of 775 pF at 100 V. This MOSFET is suitable for use in power supply, lighting, and industrial applications requiring robust high-voltage switching. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ITO220AB-N (Type HE) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 775 pF @ 100 V |
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