DMG9N65CTI
MOSFET N-CH 650V 9A ITO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMG9N65CTI is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 9A at 25°C. The ON-resistance (Rds On) is specified at a maximum of 1.3 Ohms at 4.5A and 10V gate drive. With a gate charge (Qg) of 39 nC and input capacitance (Ciss) of 2310 pF, it offers efficient switching characteristics. The component is housed in an isolated ITO-220AB package, suitable for through-hole mounting. Maximum power dissipation is 13W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C. This MOSFET finds utility in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 13W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2310 pF @ 25 V |
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