DMG9N65CT
MOSFET N-CH 650V 9A TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG9N65CT is a 650V N-Channel MOSFET with a continuous drain current of 9A at 25°C (Tc) and a maximum power dissipation of 165W (Tc). This through-hole component, packaged in a TO-220-3, features a low Rds On of 1.3Ohm maximum at 4.5A and 10V drive voltage. Key parameters include a gate charge (Qg) of 39 nC maximum at 10V and input capacitance (Ciss) of 2310 pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply units, power factor correction, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2310 pF @ 25 V |
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