DMG8N65SCT
MOSFET N-CH 650V 8A TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG8N65SCT is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 8A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 1.3 Ohms at 4A and 10V gate drive. With a maximum power dissipation of 125W (Tc) and a gate charge (Qg) of 30 nC at 10V, it is suitable for demanding power conversion tasks. The DMG8N65SCT is qualified to AEC-Q101 and meets Automotive grade specifications. Its TO-220AB (Type TH) through-hole package facilitates efficient thermal management. This MOSFET is commonly utilized in automotive power systems and general-purpose power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB (Type TH) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1217 pF @ 25 V |
| Qualification | AEC-Q101 |
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