DMG8880LSS-13
MOSFET N-CH 30V 11.6A 8SOPManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG8880LSS-13 is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 11.6A at 25°C. The device exhibits a low on-resistance of 10mOhm at 11.6A and 10V Vgs, with a maximum gate charge of 27.6 nC at 10V Vgs. Input capacitance (Ciss) is a maximum of 1289 pF at 15V Vds. Fabricated with MOSFET technology, it is available in an 8-SO surface mount package. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.43W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1289 pF @ 15 V |
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