DMG7N65SJ3
MOSFET N-CH 650V 5.5A TO251Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG7N65SJ3 is a 650V N-Channel MOSFET designed for high-voltage applications. This component features a continuous drain current (Id) of 5.5A at 25°C and a maximum power dissipation of 125W. The Rds(on) is specified at 1.4 Ohms maximum at 2.5A and 10V gate-source voltage. Key parameters include a Ciss of 886pF and a Qg of 25nC, both measured at specified drain-source and gate-source voltages respectively. The device operates within a temperature range of -55°C to 150°C and is housed in a TO-251 package. This MOSFET is qualified to AEC-Q101 standards, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 886 pF @ 50 V |
| Qualification | AEC-Q101 |
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