DMG7N65SCT
MOSFET N-CH 650V 7.7A TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMG7N65SCT is a 650V N-Channel MOSFET designed for demanding applications. This component features a continuous drain current of 7.7A (Tc) and a maximum power dissipation of 125W (Tc). With a low on-resistance of 1.4 Ohms at 2.5A and 10V Vgs, it offers efficient power switching. Key parameters include a gate charge (Qg) of 25.2 nC at 10V and input capacitance (Ciss) of 886 pF at 50V. The DMG7N65SCT is housed in a TO-220AB (Type TH) package, suitable for through-hole mounting. Operating across an industrial temperature range of -55°C to 150°C (TJ), this MOSFET is qualified under the AEC-Q101 automotive standard, making it suitable for automotive and industrial power systems.
Additional Information
Series: Automotive, AEC-Q101RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB (Type TH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 886 pF @ 50 V |
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