DMG7702SFG-7
MOSFET N-CH 30V 12A POWERDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG7702SFG-7 is an N-Channel enhancement mode MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C. The low on-resistance of 10mOhm at 13.5A and 10V (Vgs) ensures efficient power handling. It is packaged in a compact 8-PowerVDFN (POWERDI3333-8) footprint for surface mounting, with a maximum power dissipation of 890mW at 25°C (Ta). Key characteristics include a gate charge (Qg) of 31.6 nC at 10V and input capacitance (Ciss) of 4310 pF at 15V. Integrated Schottky diode functionality is present. This MOSFET is suitable for power management in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 55 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 13.5A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 890mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 15 V |
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