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DMG7401SFGQ-7

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DMG7401SFGQ-7

MOSFET P-CH 30V 9.8A PWRDI3333-8

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMG7401SFGQ-7 is a P-Channel Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 9.8A at 25°C ambient. The low on-resistance of 11mOhm at 12A and 20V Vgs makes it suitable for high-current handling with minimal power loss. Its 4.5V to 20V drive voltage range offers flexibility in system design. The DMG7401SFGQ-7 is housed in a compact 8-PowerVDFN (POWERDI3333-8) surface-mount package, enabling high-density board layouts. Key electrical characteristics include a maximum gate charge of 58 nC at 10V and an input capacitance of up to 2987 pF at 15V. The device operates across a wide temperature range of -55°C to 150°C. This MOSFET is utilized in various industries, including automotive, industrial, and consumer electronics, for applications requiring robust power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9.8A (Ta)
Rds On (Max) @ Id, Vgs11mOhm @ 12A, 20V
FET Feature-
Power Dissipation (Max)940mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePOWERDI3333-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 20V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2987 pF @ 15 V

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