DMG7401SFGQ-13
MOSFET P-CH 30V 9.8A PWRDI3333-8Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG7401SFGQ-13 is a P-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current of 9.8A at 25°C ambient temperature. Its low on-resistance of 11mOhm is achieved at 12A and 20V gate-source voltage. The MOSFET is housed in an 8-PowerVDFN (POWERDI3333-8) package, enabling efficient thermal management with a maximum power dissipation of 940mW. Key electrical characteristics include a gate charge of 58 nC at 10V and input capacitance of 2987 pF at 15V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management circuits, battery charging systems, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 940mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 20V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2987 pF @ 15 V |
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