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DMG6968LSD-13

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DMG6968LSD-13

MOSFET N-CH 20V 6.5A 8-SOP

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMG6968LSD-13 is an N-Channel MOSFET designed for power management applications. This device features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 6.5A at 25°C. The key characteristic of this MOSFET is its low on-resistance (Rds On), specified as a maximum of 36mOhm at 3.5A and a gate-source voltage (Vgs) of 1.8V. The gate threshold voltage (Vgs(th)) is 1.5V at 250µA. Drive voltages range from 1.8V to 4.5V for optimal Rds On performance. Input capacitance (Ciss) is a maximum of 151pF at 10V, with a typical gate charge (Qg) of 8.5nC at 4.5V. The DMG6968LSD-13 is available in a Tape & Reel (TR) package and is suitable for surface mounting. This component is commonly utilized in consumer electronics, industrial control systems, and power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case-
Mounting TypeSurface Mount
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Rds On (Max) @ Id, Vgs36mOhm @ 3.5A, 1.8V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package-
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)-
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds151 pF @ 10 V

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