DMG4N65CTI
MOSFET N-CH 650V 4A ITO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel MOSFET, DMG4N65CTI, features a 650V breakdown voltage and a continuous drain current of 4A at 25°C (Tc). This through-hole component utilizes Metal Oxide technology and is housed in an isolated ITO-220AB package. With a maximum power dissipation of 8.35W (Ta), it offers a typical Rds On of 3 Ohms at 2A and 10V. Key parameters include a gate charge of 13.5 nC (Max) at 10V and an input capacitance of 900 pF (Max) at 25V. The operating temperature range is -55°C to 150°C (TJ), with a Vgs(th) of 5V at 250µA and a maximum Vgs of ±30V. This device is suitable for applications in power supply and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.35W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ITO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
