DMG4N65CT
MOSFET N CH 650V 4A TO220-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG4N65CT is a 650V N-Channel Power MOSFET. This through-hole component features a continuous drain current capability of 4A at 25°C (Tc) and a maximum Rds(on) of 3 Ohms at 2A, 10V. The device offers a gate charge (Qg) of 13.5 nC at 10V and an input capacitance (Ciss) of 900 pF at 25V. With a maximum power dissipation of 2.19W (Ta), it operates across a temperature range of -55°C to 150°C. The TO-220-3 package is suitable for applications in power supply units, motor control, and lighting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.19W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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