DMG4N60SK3-13
MOSFET N-CH 600V 3.7A TO252 T&RManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG4N60SK3-13 is a 600V N-Channel Power MOSFET. This surface-mount device, housed in a TO-252-3 package, offers a continuous drain current (Id) of 3.7A at 25°C (Tc) and a maximum power dissipation of 48W (Ta). Key electrical characteristics include a drain-source on-resistance (Rds On) of 2.3 Ohms maximum at 2A and 10V, and a gate charge (Qg) of 14.3 nC maximum at 10V. Input capacitance (Ciss) is a maximum of 532 pF at 25V. The operating temperature range is from -55°C to 150°C. This MOSFET is commonly employed in power supply, lighting, and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 532 pF @ 25 V |
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